 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VUO 190 Three Phase Rectifier Bridge IdAV = 248 A VRRM = 800-1800 V VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type ~ ~ ~ + ~ ~ ~ VUO 190-08NO7 VUO 190-12NO7 VUO 190-14NO7 VUO 190-16NO7 VUO 190-18NO7* - + Maximum Ratings 248 165 2800 3300 2500 2750 39 200 45 000 31 200 31 300 -40...+150 150 -40...+125 A A A A A A A2s A2 s As A2 s C C C V~ V~ Nm Nm g 2 * delivery time on request Symbol IdAV IdAV IFSM Test Conditions TC = 100C, module TA = 35C (RthCA = 0.2 K/W), module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJH dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E72873 q q q q q q Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors q q q q 2500 3000 5 15 % 5 15 % 270 Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling q q q Mounting torque (M6) Terminal connection torque (M6) typ. Test Conditions VR = VRRM; VR = VRRM; IF = 300 A; TVJ = 25C TVJ = TVJM TVJ = 25C Dimensions in mm (1 mm = 0.0394") M6x10 Characteristic Values 0.3 5 1.43 0.8 2.2 0.45 0.075 0.6 0.1 10 9.4 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2 15 7 For power-loss calculations only per diode, 120 per module per diode, 120 per module Creeping distance on surface Creepage distance in air Max. allowable acceleration 94 80 72 26 26 54 27 6.5 A+ B- 12 25 66 (c) 2000 IXYS All rights reserved 1-2 049 Data according to IEC 60747 and refer to a single diode unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. 6.5 C~ D~ E~ 3 30 VUO 190 300 A 250 IF 200 IFSM 2000 3000 A 2500 I2t 50Hz, 80% VRRM 105 A2s VR = 0 V TVJ = 45C TVJ = 45C 150 1500 100 1000 TVJ=150C TVJ= 25C 50 500 TVJ = 150C TVJ = 150C 0 0.0 0.5 1.0 VF V 1.5 0 0.001 0.01 0.1 t s 1 104 1 2 3 4 5 6 7 ms10 89 t Fig. 4 Forward current versus voltage drop per diode 600 W Ptot 400 Fig. 5 Surge overload current Fig. 6 I2t versus time per diode 280 A RthHA : 0.1 K/W 0.2 K/W 0.5 K/W 1.0 K/W 1.5 K/W 2.0 K/W 3.0 K/W 240 Id(AV)M 200 160 120 80 40 200 0 0 40 80 120 160 200 Id(AV)M 240 A 0 20 40 60 80 100 120 140 C Tamb 0 0 20 40 60 80 100 120 140 C TC Fig. 7 Power dissipation versus direct output current and ambient temperature 0.5 K/W 0.4 ZthJC Fig. 8 Max. forward current versus case temperature 0.3 Constants for ZthJC calculation: 0.2 i 1 2 3 4 VUO 190 Rthi (K/W) 0.013 0.072 0.175 0.19 ti (s) 0.0012 0.047 0.326 2.03 0.1 0.0 0.001 0.01 0.1 1 t 10 s Fig. 9 Transient thermal impedance junction to case (c) 2000 IXYS All rights reserved 2-2 |
Price & Availability of VUO190-18NO7
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |